features *r ds(on) =5 w * 60 volt v ds complementary type - zvp3306f partmarking detail - mc absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb =25c i d 150 ma pulsed drain current i dm 3a gate-source voltage v gs 20 v power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 0.8 2.4 v i d =1ma, v ds =v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 0.5 50 m a m a v ds =60v, v gs =0v v ds =48v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 750 ma v ds =18v, v gs =10v static drain-source on-state resistance (1) r ds(on) 5 w v gs =10v, i d =500ma forward transconductance (1)(2) g fs 150 ms v ds =18v, i d =500ma input capacitance (2) c iss 35 pf common source output capacitance (2) c oss 25 pf v ds =18v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 8pf turn-on delay time (2)(3) t d(on) 3typ 5 ns v dd ? 18v, i d =500ma rise time (2)(3) t r 4typ 7 ns turn-off delay time (2)(3) t d(off) 4typ 6 ns fall time (2)(3) t f 5typ 8 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator spice parameter data is available upon request for this device zvn3306f d g s sot23 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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